Re: patent 4956811
posted on
Jul 01, 2008 08:38AM
Are they talking the same thing?
1 | 6160744 |
Semiconductor memory device and defect remedying method thereof Herein disclosed is a semiconductor memory device, in which peripheral circuits are arranged in a cross area of a semiconductor chip composed of the longitudinal center portions and the transverse... |
2 | 6108264 |
Dynamic type semiconductor memory device An ordinary read/write operation (normal operation) and a refresh operation are separated from one another and the number of read amplification circuits or, in other words, the number of sense... |
3 | 5862095 |
Semiconductor memory having both a refresh operation cycle and a normal operation cycle and employing an address non-multiplex system An ordinary read/write operation (normal operation) and a refresh operation are separated from one another and the number of read amplification circuits or in other words, the number of sense... |
4 | EP0513968B1 |
Dynamic random access memory allowing determination of a read/write control type at the final step of manufacturing process Abstract of EP0513968 There is disclosed a DRAM having a 16 bit configuration which can be used for either a 2CAS/1WE type or a 1CAS/2WE type. The type of DRAM to be used is determined by whether... |
5 | 5719815 |
Semiconductor memory having a refresh operation cycle and operating at a high speed and reduced power consumption in a normal operation cycle An ordinary read/write operation (normal operation) and a refresh operation are separated from one another and the number of read amplification circuits or, in other words, the number of sense... |
6 | 5587607 |
Semiconductor integrated circuit device having improvement arrangement of pads A DRAM includes a package, a semiconductor chip housed in the package, and a plurality of leads each disposed from the outside of the package over the periphery of the semiconductor chip. The power... |
7 | 5537351 |
Semiconductor memory device carrying out input and output of data in a predetermined bit organization In a general read out operation, data read out from a memory cell array is amplified by a preamplifier group. The amplified data is provided to a selector unit. The selector unit responds to a bit... |
8 | 5226008 |
Dynamic random access memory allowing determination of a read/write control type at the final step of manufacturing process There is disclosed a DRAM having a 16 bit configuration which can be used for either a 2CAS/1WE type or a 1CAS/2WE type. The type of DRAM to be used is determined by whether there is a connection... |
9 | EP0513968A2 |
Dynamic random access memory allowing determination of a read/write control type at the final step of manufacturing process. There is disclosed a DRAM having a 16 bit configuration which can be used for either a 2CAS/1WE type or a 1CAS/2WE type. The type of DRAM to be used is determined by whether there is a connection... |
10 | 5018101 |
Semiconductor memory A semiconductor memory wherein an operating mode is selectively set by effecting bonding with respect to predetermined pads provided on a common semiconductor substrate in a predetermined... |
I would appreciate someone showing me how they "teach"
Be well