With respect fairchij, I don't think Indium is a completely new addition to POET, but the way in which they now intend to use it is new.

See both drawings linked below from Patent dated Nov 12, 2002

(right-click to rotate drawing)

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http://pdfpiw.uspto.gov/.piw?docid=06479844&SectionNum=2&IDKey=936E944A4B63&HomeUrl=http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1%2526Sect2=HITOFF%2526d=PALL%2526p=1%2526u=%25252Fnetahtml%25252FPTO%25252Fsrchnum.htm%2526r=1%2526f=G%2526l=50%2526s1=6479844.PN.%2526OS=PN/6479844%2526RS=PN/6479844

http://pdfpiw.uspto.gov/.piw?docid=06479844&PageNum=4&IDKey=936E944A4B63&HomeUrl=http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1%2526Sect2=HITOFF%2526d=PALL%2526p=1%2526u=%25252Fnetahtml%25252FPTO%25252Fsrchnum.htm%2526r=1%2526f=G%2526l=50%2526s1=6479844.PN.%2526OS=PN/6479844%2526RS=PN/6479844

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I think the key words from the nr is "high-volume" Indium source.

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"Facility Upgrades
In accordance with its planned maintenance scheduled for the POET facility, the Company has completed its most recent wafer growth cycle.

In association with this, POET is upgrading its molecular beam epitaxy (MBE) system to make critical additions and replenish source materials. One critical addition is a high-volume indium (In) source to enable metamorphic growth on a gallium arsenide (GaAs) substrate of the POET epitaxy with a natural wavelength of 1550-nm. This is expected to enable the production of long-wavelength lasers combined with high In-content field-effect transistor (FET) channels for superior high-speed transistor performance."

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Notice on the detail (first drawing) for the layers Indium is specified as %15 for some of the layers.

This is all just conjecture on my part based on the wording and what I found in the patents. I'm assuming that they already have the ability to dope the GaAs with Indium but need an upgrade to the MBE to reach higher volume levels needed to achieve their goals.

Interested in your thoughts.

Green