Somebodyfromanywhere: Is this Samsung on their own, or is this based on POET?

This has nothing to do with POET. It is InGaAs on a InP substrate and still in the research state at Pennsylvania State University fundet by Samsung.

They are still facing several challenges, including the slow hole mobility in p-channel devices. For more details see the article.

The article describes the current state as follows:

• "[Penn State researchers] Thathachary and Datta have spent a year optimizing the processes for the current 3D FinFET, and the success has prompted Samsung to give the lab another year's funding to prove that it can go to 7nm fins and retain a significant advantage over silicon FinFETs. … If the researchers can demonstrate a 7nm III-V device that can still beat silicon, Samsung will likely internalize further research to integrate III-V FinFETs n-channels with germanium p-channels on silicon substrates for mass production, probably at the 5nm node."

So they have another year researching in the university lab.

Looking at our own little company, POET's 40 nm PET "prototypes will be ready for display and testing with third parties by the end of 2014." I think we have no reason to slow down, but we are still clearly ahead of the curve.