Tombot cited from http://www.compoundsemiconductor.net/article/95225-iii-vs-prepare-to-replace-silicon.html:

"Researchers at KANC, working in partnership with those at Yonsei University, Sematech and GlobalFoundries, announced at the conference a claim for record effective mobility of more than 5500 cm2 V-1 s-1, using a III-V MOSFET incorporating an In0.7Ga0.3As channel."

While it is nice to see yet another research supporting the particular properties of certain III-V materials with respect to speed and power consumption, compared with POET it is still in its infancy.

First, it is still a research project. No chance they'll reveal a product before POET does.

Second, the above-quoted mobility they are talking about is electron mobility. And with 5500 cm2 V-1 s-1 it is inferior to POET's electron mobility which is somewhere in the range of 8500 to possibly more than 12000 cm2 V-1 s-1.

Third, they don't talk about hole mobility. The reason is they don't have any. They have an n-type transistor (NMOS), and that's it. However, if they wanted to replace silicon CMOS, they would also have to have p-type transistors (PMOS), because CMOS = NMOS + PMOS. In fact, they say they want to be "adjacent to other devices, such as silicon CMOS and/or germanium PMOS" – which probably won't simplify the process but still restrict the overall performance to what their silicon or germanium PMOS counterpart offers. Bottom line: KANC can't do CMOS, POET can.

Forth, they are using a voltage of 0.5 V. POET is operating with 0.3 V. Since the power comsumption is quadratic to the voltage, POET consumes much less.

Fifth, they can't do optics. POET can.

Sixth, semiconductor experts will probably find even more differences.