Please observe the revised definition"The Solution" on Page 9. Thanks to Rob for posting the URL under Agoracom Link Library:

http://www.poet-technologies.com/docs/POET-Technologies-Corporate-Overview.pdf

The Solution
Change the Semiconductor Material

• III-V transistors perform at least 5X better than Si based transistors at same node. Our projection is that logic performance in our technology should be equivalent to a 3 to 4 node jump in Si technology
• III-V transistors also make much better analog circuitry which results in far superior mixed signal performance that is key to today’s SoCs
• III-V materials make for excellent photonic devices

Plus INTEGRATE Novel and Disruptive Capabilities

• New active and passive optical devices to overcome on- and off-chip interconnect
  limitations of current Silicon CMOS solutions
• Novel OE bipolar transistor and thyristor action without stored charge enables very high speeds PLUS act as photo detectors and emitters
• New applications made possible by novel devices and integration
• Optoelectronic functions implemented as co-packaged discrete devices replaced with single integrated device

********Older Corporate Overview Page 9 October 2014**********************

The Solution
Change the Semiconductor Material

• Utilize high mobility III-V channels to enable quantum leap in supply voltage scaling and higher switching performance: GaAs
• Integrate necessary device types on single chip

AND

Add Novel Capabilities (integrated on the same die)

• New active and passive optical devices to overcome on- and off-chip interconnect
  limitations of current Silicon CMOS solutions
• Leverage novel devices – bipolar transistor and thyristor action without stored charge enables very high speeds
• New applications made possible by novel devices and integration
• Optoelectronic functions implemented as co-packaged discrete devices replaced with single integrated device