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Message: Subhash Deshmukh worked with group III-V compound semiconductor materials

Here is one of his patent:

04/02/15 - 20150093862 - Interface treatment of semiconductor surfaces with high density low energy plasma


An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials....

One more challenge in cleaning of Ge and group III-V compound semiconductor surfaces is the high surface reactivity of these materials. Ge—Ge and group III-V compound bonds have lower bond enthaplies as compared to silicon, as shown below in Table 1.

TABLE 1 Bond Energy (eV) Ge—Ge 2.63 Ge—O 6.59 Ge—H 3.21 Si—Si 3.28 Si—H  2.99  In—As 2.01 Ga—As 2.09

Traditional plasma sources such as inductively coupled sources and capacitively coupled sources have plasma ion energy ranges above the bond energies of many of the materials of Table 1 and are known to cause significant surface damage on some materials listed in the table, particularly the materials having bonding energies below the Si—Si bonding energy, such as those found in group III-V compound semiconductor elements. Dangling Ge and group III/V element bonds on the surface are the root cause of high density of interface states and Fermi level pinning which is detrimental for transistor performance.

http://www.freshpatents.com/Subhash-Deshmukh-North-Andover-invdxd.php

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