http://purl.stanford.edu/zm215bs8409

The high cost of single-crystal III-V substrates limits the use of gallium arsenide (GaAs) and related sphalerite III–V materials in many applications, especially photovoltaics. However, by making devices from epitaxially grown III–V layers that are separated from a growth substrate, one can recycle the growth substrate to reduce costs. Here, we show damage-free removal of an epitaxial single-crystal GaAs film from its GaAs growth substrate...

watch the vid: https://stacks.stanford.edu/file/druid:zm215bs8409/GaAs%20animation.mov