http://www.nist.gov/pml/div683/conference/ http://www.nist.gov/pml/div683/conference/2015_speakers.cfm The Semiconductor and Dimensional Metrology Division (SDMD) provides technical leadership in measurement science research, development, and standards essential to advanced manufacturing. The Division realizes the SI unit of length and the derived units of acceleration, and acoustic pressure for the U.S. The Division provides leadership in conducting research in the areas of dimensional, nanometer-scale, surface, and acoustic pressure metrology; accelerometry; silicon Complementary Metal-Oxide Semiconductor (CMOS) technology; MicroElectroMechanical Systems (MEMS); power electronics; nanoelectronics; and flexible/printed electronics. The SDMD’s technical activities span from basic research to critical measurement services that impact the U.S. industry in high-priority areas such as advanced manufacturing and nanotechnology. Research thrusts include 3D nanoscale metrology for nanomanufacturing, advanced devices, and advancing the state of the art for length measurements. The Division’s dimensional measurements range over 15 orders magnitude. The SDMD is based in Gaithersburg, Maryland. The Division operates within the Physical Measurement Laboratory at NIST. The 2015 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN) was held at the Hilton Dresden Downtown in Dresden, Germany, April 14-16, 2015. Dresden The Conference: While a city of notable art treasure, architectural sights, and a charming landscape, Dresden also has largest hub of microelectronics in Europe. Dresden is a center of materials science and engineering (more than 2000 materials scientists and engineers at TU Dresden and in several institutes). The FCMN brought together scientists and engineers interested in all aspects of the characterization technology needed for nanoelectronic materials and device research, development, and manufacturing. All approaches were welcome: chemical, physical, electrical, magnetic, optical, in-situ, and real-time control and monitoring. The conference summarized major issues and provided critical reviews of important semiconductor techniques needed as the semiconductor industry moves to silicon nanoelectronics and beyond. The conference consisted of formal invited presentation sessions and poster sessions for contributed papers. The poster papers covered new developments in characterization and metrology especially at the nanoscale. The conference series began at NIST in 1995. There have been nine conferences in the series.