A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed.

Patent number: 9082637

Type: Grant

Filed: Jun 19, 2013

Issued: Jul 14, 2015

Patent Application Number: 20140050242

Assignees: THE UNIVERSITY OF CONNECTICUT (Farmington, CT), OPEL SOLAR, INC. (Storrs Mansfield, CT)

Inventor: Geoff W. Taylor (Mansfield, CT)

http://patents.justia.com/patent/9082637