It's a continuation of a previous patent that was approved in May.

Basically it covers: optical emitters, optical detectors, optical modulators, optical amplifiers, and optical switches

Used for anything related to "lasers" including Quantum Computing, Optical Communication, Optical Computing Chips & actual Lasers.



"The present application relates to semiconductor integrated circuits that implement a variety optoelectronic functions (such as optical emitters, optical detectors, optical modulators, optical amplifiers, and optical switches) and electronic functions (such as heterojunction field effect transistors and bipolar field effect transistors).

The present application builds upon technology (referred to by the Applicant as “Planar Optoelectronic Technology” or “POET”) that provides for the realization of a variety of devices (optoelectronic devices, logic circuits and/or signal processing circuits) utilizing inversion quantum-well channel device structures

With these structures, a fabrication sequence can be used to make the devices on a common substrate. In other words, n type and p type contacts, critical etches, etc. can be used to realize all of these devices simultaneously on a common substrate. The essential features of this device structure include 1) an n-type modulation doped interface and a p-type modulation doped quantum well interface, 2) self-aligned n-type and p-type channel contacts formed by ion implantation, 3) n-type metal contacts to the n-type ion implants and the bottom n-type layer structure, and 4) p-type metal contacts to the p-type ion implants and the top p-type layer structure. The active device structures are preferably realized with a material system of group III-V materials (such as a GaAs/AlGaAs)."