Nice posts Oz and the links are a great read. I did search on Qorvo news and found this (1). This is pHEMT process. (2) POET uses pHFET and nHFET (enabling static CMOS-like digital circuit topology) devices are used, for analog and mixed signal circuits both pHBT and nHBT in combination with FETs. The last one (3) is a comparison between the process.

POET looks good :D

1)

Qorvo Ups Optical Bandwidth with New GaAs Process Technology

TQPHT09 90 nm pHEMT Ideal for Next-Generation High Frequency Amplifiers

Greensboro, N.C. and Los Angeles, Calif – March 26, 2015 – Qorvo, Inc. (Nasdaq: QRVO), a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, today announced a new gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process technology that provides higher gain/bandwidth and lower power consumption than competing semiconductor processes. Qorvo™'s new TQPHT09 is a 90 nm pHEMT process that supports Qorvo's next-generation optical product portfolio. Coupled with Qorvo's industry-leading reliability, this new process is ideal for next-generation high frequency, high performance amplifiers required for 100G+ linear ap

http://www.qorvo.com/news/2015/qorvo-ups-optical-bandwidth-with-new-gaas-process-technology

2)

POET is developing a unique Planar Opto-Electronic Technology (POET) revolutionary process technology to integrate electrical and optical devices used in small, medium and very large scale ICs today in native III-V materials. For high speed digital logic, pHFET and nHFET (enabling static CMOS-like digital circuit topology) devices are used, for analog and mixed signal circuits both pHBT and nHBT in combination with FETs are available and for optical devices an optical thyristor is an important multi-functional device. The structures are compatible with scaling to nanometer region by leveraging processes and lithography capabilities already proven in Si CMOS. POET can address an overall semiconductor market that is projected to grow to $372 billion and remains a rapidly growing segment of our economy, according to Global Industry Analysts. POET’s value proposition is to deliver a fabrication process that would integrate digital, analog, mixed signals and optical devices in the same chip while projecting to deliver higher application performances up to 10 times faster than current technologies and solution power savings that could reach up to 90%. The business model is to license the newly developed process technology to foundries and fab-less customers in all segments of the commercial and military markets.

http://www.poet-technologies.com/docs/POET-Overview.pdf

3)

The properties of HBTs, HEMTs, PHEMTs and MESFETs are reviewed and discussed in the context of their suitability for various applications. Noise, power and high frequency performance is reviewed and the physical mechanisms dictating their values are discussed. The reliability characteristics of the devices are discussed and system applications are reported. INTRODUCTION GaAs-based devices and circuits have a well-defined place in commercial and defense applications as evidenced by their use in a variety of products and systems. Applications extend from the low-frequency spectrum of several hundred MHz to the millimeterwave range. The choice of a device is influenced by its maturity in terms of manufacturing but also by other criteria, which are related to fundamental operation mechanisms and determine the performance. Although MESFETs have for long been considered the most mature components, HEMT and HBT technology made significant advances due to the lessons learnt from both III-V and Si manufacturing approaches. This paper presents basic considerations regarding the properties of HBTs, HEMTs/PHEMTs and MESFETs and addresses the relative merits of each technology

http://csmantech.pairserver.com/Digests/1999/PDF/42.pdf

cheers