I wonder how close we are to confirming the following?

"POET believes that they can use their III-V (GaAs) VCSEL epitaxy process and their new DOES technology to integrate both VCSELs and electronic FETs (field effect transistors) and HBTs (Heterojunction Bipolar Junction Transistors) on a one-chip solution that will provide 10X improvement over what can be provided by silicon photonics in this space (see POET white paper here). "