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GT's latest journal articles

posted on Apr 11, 2017 12:55PM

Article: A New Digital OptoElectronic Switch (DOES) Laser

ABSTRACT:

A new laser structure is introduced which is unique in its potential for the optoelectronic integration of lasers and transistors. The laser is based on the combination of conjugate quantum well modulation doped interfaces such that n type and p type inversion channels are available. Overall the electrical behavior of the laser is that of a thyristor with the cw operation of the laser being obtained in the low resistance on state. In this paper, the laser is analyzed on the basis of no-k selection to develop the appropriate rate equations. The I-V relations of thyristor are then developed and combined with the optical rate equations of the quantum wells to predict the threshold voltage. Then the threshold current, the electrical efficiency of each quantum well set and the overall slope efficiency of the laser are obtained. The results are compared to the corresponding PiN laser with the same photon lifetime. In a following paper, the first demonstration of the laser is reported.

Article · Mar 2017 · IEEE Journal of Quantum Electronics

Article:Turn-ON Analysis for a Thyristor-Based Photoreceiver

Abstract:

A resonant-cavity thyristor photodetector based on the GaAs/AlGaAs material system is fabricated and characterized. The device is triggered with an optical input between a high impedance OFF-state and a low impedance ON-state. Peak linear slope efficiency of 4 A/W is obtained in the OFF-state at the resonant wavelength of 986.6 nm, and is greater than 1 A/W across a 5-nm spectral bandwidth. Operated as an optoelectronic switch, turn-ON is enabled with 20 μW of optical input power yielding a large-signal current gain of 125 and an output voltage of 1.9 V.

Published in: IEEE Journal of Quantum Electronics ( Volume: 52, Issue: 11, Nov. 2016 )

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