Four new SCL tenders for equipment to be used to process and/ or test various characteristics of III-V material wafers (eg.) GaAs wafers.  (Atomic Layer Deposition (ALD) Tool, Photoluminescence (PL) mapping system for Group III-V, High Resolution X-ray Diffractometer (HRXRD) system for Group III-V, Hall Effect measurement system for Group III-V).

Just sayin’.....they’re gearing up to work with III-IV compounds - whether it’s with us or not remains to be seen.

1. Supply, Installation and Commissioning of Atomic Layer Deposition (ALD) Tool for 150mm and 200mm wafer size.

1. Vendor’s scope of work shall cover supply, installation & commissioning of stand-alone, in-line (i.e. compatible to clean-room environment) and non-contact (i.e. non-destructive) Photoluminescence (PL) mapping system for Group III-V compound semiconductor based epi- layers operating at room temperature with necessary hardware and software.  Mapping of peak position (wavelength/energy), peak intensity, integrated intensity and full-width- half-maxima of photoluminescence spectra at room temperature of below mentioned epi-layers deposited on 200mm, 150mm (support 100mm, 75mm, 50mm) wafer using Metal Organic Chemical Vapor Deposition (MOCVD) reactor. Group III-V epi-layers - InGaAs, GaAs, InAs, AlGaAs InGaP, InP, GaAsP with/without p- or n- doping on GaAs/Si/SiC substrate. Group III-Nitrides epi-layers - GaN, AlGaN, with/without p- or n-doping on GaAs/Si/SiC substrate

1. Vendor’s scope of work shall cover supply, installation & commissioning of High Resolution X-ray Diffractometer (HRXRD) system with all necessary hardware and software for Group III-V compound semiconductor based epi-layers.  Tool shall be capable of measuring structure information (composition, thickness, superlattice period) and the defects in structures (mismatch, relaxation, misorientation, dislocation density, curvature) of Group III-V based epi-layers (InGaAs, GaAs, InAs, AlGaAs) on GaAs/Si/SiC wafer and Group III-Nitrides epi-layers on GaAs/Si/SiC wafer of size up to 150mm diameter.

1. Vendor’s scope of work shall cover supply, installation & commissioning of Hall Effect measurement system with all necessary hardware and software for Group III-V compound semiconductor based epilayers. (Eg.) GaAs Measuring the sample resistance, resistivity, carrier concentration, Hall coefficient, mobility of charge carriers, n-/p- type selection and current-voltage characteristics of metal organic chemical vapor deposition (MOCVD) reactor grown: a. Group III-V epi-layers (InGaAs, GaAs, InAs, InGaP, InP, AlGaAs, GaAsP with/without p- or n- doping) on GaAs/Si/SiC substrates of size up to 80mm. b. Group III-nitrides epilayers (GaN, AlGaN, AlN with/without p- or n- doping) on GaAs/Si/SiC substrates.