Optoelectronic integrated circuit 

Abstract

A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.

Inventors: Taylor; Geoff W. (Mansfield, CT)

Applicant: THE UNIVERSITY OF CONNECTICUT, Opel Solar, Inc

Assignee: THE UNIVERSITY OF CONNECTICUT (Farmington, CT),

Opel Solar, Inc. (Storrs Mansfield, CT)

Family ID: 1000003441092

Appl. No.: 15/450,400

Filed: March 6, 2017

http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=10038302.PN.&OS=PN/10038302&RS=PN/10038302