Aiming to become the global leader in chip-scale photonic solutions by deploying Optical Interposer technology to enable the seamless integration of electronics and photonics for a broad range of vertical market applications
Message: Photonic Memory
Photonic Memory? Yes, I was proven wrong. When my PhD students, Zefeng Xu and Chun-Kuei Chen came to me a year ago about an idea to integrate Ferroelectrics and Lithium Niobate for electro-optic modulation, I was quite skeptical. I questioned whether the poor dielectric constant matching between Hafium Zirconate (HZO) and Lithium Niobate would ever lead to any interesting ferroelectric-optic field effect. Moreover, processing Lithium Niobate was no cake walk, and adding HZO would be adding a taller order for the two students looking to graduate soon. Well, what do I know…They did it! Working with my expert photonics colleague Aaron Danner and the Canadian-based Photonic chip company POET Technologies through the SHINE@NUS Center, they made the the first HZO-Lithium Niobate hybrid Photonic Memory device that allows the modulation of optical resonances by a non-volatile ferroelectric analog memory. Their paper, “First Demonstration of HZO-LNOI Integrated Ferroelectric Electro-Optic Modulator and Memory to Enable Reconfigurable Photonic Systems,” has been selected for this year’s prestigious IEEE International electron device meeting (IEDM) next month in San Francisco (https://www.ieee-iedm.org) (Dec 11, 1:30pm - 4:30pm Monday PST, Continental 7-9). I welcome folks attending the conference to drop in for a listen. The technology can potentially enable Non-volatile Analog Compute-In-Memory for Photonics as well as Reconfigurable photonic circuits and interposers. Well, I had never felt so excited about being proven wrong. Cheers to Zefeng and Hank!
(And see the comments on Linkedin by Poet and others)
out of netw
7 Recommendations
Loading...
Loading...
New Message
Please
login
to post a reply