Samsung`s OneNAND™ device, providing a new Unified Storage concept, combines the high-speed data read function of NOR flash and the advanced data storage of NAND flash. The single chip is based on NAND architecture integrating buffer memory and logic interface.

Featuring a 66MHz synchronous interface and cache read function that enable an enhanced read performance of 108MBytes per second (MBps), the 1Gb OneNAND™ Flash boasts a four-fold read speed increase over conventional NAND Flash performance. Its faster read speeds resolves the delay time in copying the boot code from the NAND Flash to the DRAM and executing applications on-demand.

Today, a continuous multi-shot capability is limited to the DRAM buffer size. The 1Gb OneNAND™ delivers 10MBps of write speed, enabling direct write into the total Flash memory space without the need for DRAM buffering. This provides continuous, multi-shot capturing of 5-Megapixel images and real-time recording of VGA resolution video.

The OneNAND™ device also supports enhanced security features. An OTP block has been integrated into its design to prevent forgery. In addition, a lock function for the memory block unit is available to protect the operating system from viruses.

Samsung`s OneNAND™ Flash solution is available separately or can be mounted together with a mobile SDRAM in an MCP to effectively execute the key operations on feature intensive next-generation mobile phones. Placing two 1Gb OneNAND™ Flash and one mobile SDRAM in a 3chip MCP, can satisfy the high performance, multimedia memory requirements of 3G mobile handsets.

Samsung`s complementary Flash software solution includes a selection of operating software, an interface to RTOS file systems, all respective device drivers, and software development tools that further facilitate the application of OneNAND™ to mobile handsets.

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Today, a continuous multi-shot capability is limited to the DRAM buffer size. The 1Gb OneNAND™ delivers 10MBps of write speed, enabling direct write into the total Flash memory space without the need for DRAM buffering. This provides continuous, multi-shot capturing of 5-Megapixel images and real-time recording of VGA resolution video.

What that means....they have eliminated the need for large DRAM.

The system is sized....this is exactly what MOS does....pairing down to a small micro controller and sizing the cache to as small as 256byte...or what ever is needed.

The Samsung system utilizes a micro controller and a sized cache...not having to incorporate typical DRAM sizes.

The system is variable...with a ``complementary Flash software solution``

This is not a dedicated controller...as Toshiba and Sandisk are now hashing over.

doni