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Message: Re: US Patent 6878986 - Embedded flash memory cell having improved programming and e

May 23, 2008 11:16AM

"THIS IS VERY INTERESTING ! DUANE MORRIS ACCEPTED ALL EDIG CLAIMS AND PATENTS DESPITE KNOWING FOLLOWING EMBEDDED FLASH MEMORY PATENTS.TO ME IT MEANS THEY DID THOROUGH AND EXHAUSTING DUE DILLIGENCE BEFORE THEY SIGNED CONTRACT WITH EDIG. THAT MEANS A LOT WITH AN EXTRA ORDINARY CONFIDENCE ON OUR PATENTS VALIDITY."

"What is claimed is:

1. A flash memory cell comprising: "

sman.....the material you posted has nothing to do with e.Digital. The patent deals with the physical make up of cell structure and related properties.....

"9. The flash memory cell according to claim 1, wherein the floating gate structure includes a dielectric film and an electroconductive film disposed over the dielectric film."

Or, the manner in which an electrical charge is trapped and discharged within a cell, allowing for a digital arrangement of 1's and 0's.

e.Digital does not care what the physical properties are of the memory. All e.Digital does is format the cells to their liking, through the electrical inputs and outputs of the memory. They utilize the physical electrical connections to the cells for program/ reset(erase) and read the cells.

The cell memory makeup can be of any type electrical, crystalline, magnetic....etc.

If there are particular problems of a substratum that will only allow for a limited number of cycles of reset(erase) for cells, it would be up to e.Digital to address this problem and through their process balance the resets allowing for the best performance of the device.

e.Digital can reside over any memory utilizing their patented principles. They treat serial and parallel addressed memories in the same manner making for simplified implementations.

doni



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