INTERESTING RE DUANE MORRIS ACCEPTING TO REPRESENT e.DIGITAL FLASH MEMORY
in response to
by
AGORACOM
Message: Arrogant form letter from Agoracom with no details.
Some times ago there was a discussion in this board that DUANE MORRIS accepted the contingency plan just for sake of money . But contrary when we looked in few articles that has been written it was disclosed they only accept an IP case when in depth due dilligence done and finally presented to team of expert inside and (outside contractor) lawyer and finally they take the responsibility of the case .Here is another FLASH MEMORY patent that DUANE MORRIS representing their agent and firm.
US Patent 6878986 - Embedded flash memory cell having improved programming and erasing efficiency
US Patent Issued on April 12, 2005
Estimated Patent Expiration Date:
March 31, 2023
Estimated Patent Expiration Date:
March 31, 2023Inventors
Assignee
Application
No. 10403137 filed on 03/31/2003US Classes:
257/315, With floating gate electrode257/E21.682, With source and drain on same level and without cell select transistor (EPO)257/E27.103, Electrically programmable ROM (EPO)438/265, Oxidizing sidewall of gate electrode438/279, Making plural insulated gate field effect transistors having common active region438/283, Plural gate electrodes (e.g., dual gate, etc.)438/303Utilizing gate sidewall structureField of Search
257/E21.682, With source and drain on same level and without cell select transistor (EPO)257/E27.103, Electrically programmable ROM (EPO)438/265, Oxidizing sidewall of gate electrode438/279, Making plural insulated gate field effect transistors having common active region438/283, Plural gate electrodes (e.g., dual gate, etc.)438/303Utilizing gate sidewall structureExaminers
Primary: Nelms, David C.Assistant: Tran, Mai-Huong
Attorney, Agent or Firm
US Patent References
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Inventor: Hu, et al.
International Class
H01L029/788
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