"Bring high performance to your serial Flash memory based designs with Spansion's MirrorBit SPI Multi-I/O family. Including 32 Mb to 128 Mb devices, this new family offers read performance up to 40 MB/s, matching or exceeding conventional parallel NOR Flash memory."

For Spansion, they are involved in the physical characteristics of memory.....More specifically as it relates to Samsung and methods of dielectric infringement. Floating gate cells vs. trapped electron cells,....For e.Digital it doesn't matter what the cell.

As I have noted in the past....serialized memory offerings like NAND, are the future when it comes to CE, so far it seems to be going that way. It's cheaper to produce and it's the preferred memory for e.Digital, however, they can implement others.

As to the read speed noted above....they just need make sure they are not utilizing claims that are considered in e.Digitals patents regarding the streaming of data, simple or advanced.

I don't care what Spansion or Samsung are up to, as their issues are not ours. They only become an issue for us, when organizing and streaming data from their memory offerings. It's kind of a "they can make it, but they can't use it in e.Digital fashion".

There are some here who have considered management stupid, I beg to differ, they have had to wait out the process of memory advancements.... it is upon us, and e.Digital IS going to be part of the process.

One of the main reasons I invested in e.Digital is because their patents are for serialized processes that allow total utility....something that status quo can't do with out tripping over e.Digital.

doni