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doni

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Digital output driver and input buffer using thin-oxide field effect transistors

posted on Nov 02, 2009 09:22PM

http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=28&f=G&l=50&co1=AND&d=PTXT&s1=%22San+Diego%22.ASCI.&OS=AC/"San+Diego"&RS=AC/"San+Diego"

I'll be looking into this issue. The object of this patent is to save power by matching the high voltage I/O reference of memory devices.... by sub matching to lower reference voltage using thin-oxide ....kind of a device having thick-oxide I/O the memory and passing signals to the thin-oxide side....where in, they supposedly save power in the trade off. Once the thick side passes the signal to the thin side...the thick side turns off.

My concern is the input buffer, the size of it and what type data/bit-stream it serves from the memory.