From June 3, 2013 news release:

http://www.poet-technologies.com/wp-content/uploads/2013/06/NR-3June2013-FacilityDev-Update.pdf

The Molecular Beam Epitaxy (MBE) System used in gallium arsenide wafer production was the most damaged and required a virtual rebuild. The MBE has now been fully refitted and is completing its “burn-in” cycle. A sample testing procedure will commence following which the MBE System is expected to be declared operable and ready to be placed online. Although severely impacted by the MBE failure, 1)this quarter’s milestone still appears on track to be met. Once on-line wafer production begins, producing wafers for the continuance of 2)the BAE Systems military IR Sensor proof of concept project due for completion later this year will take precedence.

On the january presentation only one milestone was due for Q2-2013:

3/4 Terminal Switching Laser Demonstration (OPEL Lab).

1) Why and how in less than 24days they changed their mind (on supposed SSC request) and succeed to achieve another milestone that was not already planned on June 3?

June 27, 2013 OPEL Technologies Inc. Achieves Integrated Circuit Milestone via Proprietary POET Platform

http://www.poet-technologies.com/wp-content/uploads/2013/06/NR-27June2013-MilestoneCompInverter.pdf

2) Is the IR sensor and the Optical Thyristor-based Infrared Detector Array Fabrication and Validation (3rd PartyFab) are the same?

A problem with the Molecular Beam Epitaxy (MBE) could explain the delay on Milestone 5 and 7.

Hopes to have your comments

Best regards