Infineon and Panasonic develop future semiconductor
posted on
Mar 11, 2015 04:00AM
March 11, 2015 by JM
Infineon and Panasonic cooperate in future semiconductor Tokyo (JAPAN MARKET / fr) - The German chip giant Infineon and the Japanese electronics company Panasonic will develop gallium nitride blocks together. The first exclusive blocks have been around to see on a US Fair in March. Gallium nitride on silicon is considered an important semiconductor technology of the future.
Higher energy efficiency
GaN-on-silicon takes place in the professional world greatest attention as a next-compound semiconductor technologies, which enables both high power density and therefore smaller mounting surfaces, for example, power supplies and adapters. On the other hand, it serves as an essential key to improving energy efficiency.
Infineon has agreed with Panasonic to cooperate in the development of gallium nitride devices. In this context, the South German company Panasonic has received a license for the normally-off GaN transistor structure. Financial details of the collaboration is not called Infineon. It had "agreed not to disclose further contract details," the Mutual Group.
Dual sourcing agreement
The new gallium nitride (GaN) building blocks based on the self-locking GaN-on-silicon transistor structure of Panasonic, which is integrated in a surface mount (SMD) packages of Infineon. In this context, Panasonic has awarded a license for the self-locking GaN transistor structure at Infineon. Both companies are now prepared on the basis of the agreement high quality GaN devices.
Customers will benefit from two possible sources of supply for GaN power switch in a compatible enclosure: a possibility which hitherto there has been no other for GaN-on-silicon chip. The partners have agreed not to disclose further contract details. Pattern of a 600 V 70 milliohms block in a DSO (Dual Small Outline) package, the company will introduce the first time at the Applied Power Electronics Conference and Exposition (APEC), which from 15 to 19 March 2015 in Charlotte, North Carolina , USA, takes place.
High growth rates
Based on the GaN-on-silicon technology power semiconductor can generally be used in a wide range of applications, from industrial high voltage applications such as power supplies in server farms (a potential area of application issued 600 V GaN-block) to low voltage applications such as the DC-DC Encrypt-ment in high-end consumer goods.