Re: re: RWT forum posts
in response to
by
Aiming to become the global leader in chip-scale photonic solutions by deploying Optical Interposer technology to enable the seamless integration of electronics and photonics for a broad range of vertical market applications
Message: Re: re: RWT forum posts
LOL, Engaging some on those forums can be like shouting at mice in a maze. It doesn't really help.
But then we think, "Maybe... maybe, this time they'll listen... maybe."
"And in the end, all we really want is to help them see the light... right?"
"I mean, they're so close..."
A couple excerpts from the Real World Technologies forum:
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How would NTV play into this?
By: Joel (joel.hruska.delete@this.gmail.com), April 23, 2015 12:38 pm
Room: Moderated Discussions
If I can ask a relatively baby question:
A few years ago, Intel demonstrated its efforts with near-threshold voltage and indicated it was working to build chips that could operate in this mode as a means of reducing idle and low-use power consumption. The results looked impressive, if the tech worked.
Would a shift to III-V materials and dropping voltage down into the 0.5V area kill the need for NTV parts -- or is that a technology that could still be deployed, even if the industry moves away from Si and to some of these other materials? Does using InGaAs or SiGe make NTV easier or more difficult to deploy?
A few years ago, Intel demonstrated its efforts with near-threshold voltage and indicated it was working to build chips that could operate in this mode as a means of reducing idle and low-use power consumption. The results looked impressive, if the tech worked.
Would a shift to III-V materials and dropping voltage down into the 0.5V area kill the need for NTV parts -- or is that a technology that could still be deployed, even if the industry moves away from Si and to some of these other materials? Does using InGaAs or SiGe make NTV easier or more difficult to deploy?
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> -Intel will not use III-V for logic device channels prior to 5nm except possibly as a peripheral
> device integrated for mobile apps in the MOL or BEOL (not at the transistor level)- personally
> I seriously doubt III-V will come to logic at all, but certainly not before 5nm.
I think it's quite possible that some classes of devices will never get high mobility materials due to cost constraints. Ironically, I see the best fit for high mobility in servers rather than mobile. Reducing voltage is a big deal for servers if you can keep constant performance.
David
http://www.realworldtech.com/forum/?threadid=149685&curpostid=149730
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For your amusement,
http://www.theonion.com/articles/sonofabitch-mouse-solves-maze-researchers-spent-mo,2432/
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